1N5820 - 1N5822
Document number: DS23003 Rev. 9 - 2
1 of 3
www.diodes.com
November 2010
? Diodes Incorporated
1N5820 - 1N5822
3.0A SCHOTTKY BARRIER RECTIFIERS
Features and Benefits
?
Guard Ring Die Constructi
on for Transient Protection
?
Low Power Loss, High Efficiency
?
High Surge Capability
?
High Current Capability and Low Forward Voltage Drop
?
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
?
Lead Free Finish, RoHS Compliant (Note 1)
Mechanical Data
?
Case: DO-201AD
?
Case Material: Molded Plastic.
UL Flammability Classification
Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020
?
Terminals: Finish - Tin. Pl
ated Leads Solderable per MIL-STD-
202, Method 208
?
Polarity: Cathode Band
?
Marking: Type Number
?
Weight: 1.1 grams (approximate)
Ordering Information (Note 2)
Device
Packaging
Shipping
1N5820-B DO-201AD 500 Bulk
1N5820-T
DO-201AD
1.2K/Tape & Reel, 13-inch
1N5821-B DO-201AD 500 Bulk
1N5821-T
DO-201AD
1.2K/Tape & Reel, 13-inch
1N5822-B DO-201AD 500 Bulk
1N5822-T
DO-201AD
1.2K/Tape & Reel, 13-inch
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 3)
VRRM
VRWM
VR
20 30 40 V
RMS Reverse Voltage
VR(RMS)
14 21 28 V
Average Rectified Output Current
(Note 4) @ TL
= 95
°C
IO
3.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
@ T
L
= 75
°C
IFSM
80 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance (Note 5)
RθJA
40
°C/W
RθJL
10
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol 1N5820 1N5821 1N5822 Unit
Forward Voltage
@ IF
= 3.0A
0.475
@
IF
= 9.4A
VFM
0.850
0.500
0.900
0.525
0.950
V
Peak Reverse Current
@ TA
= 25
°C
at Rated DC Blocking Voltage (Note 3) @ TA
= 100
°C
IRM
2.0
20
mA
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. For packaging details, go to our website at http://www.diodes.com.
3. Short duration pulse test used to minimize self-heating effect.
4. Measured at ambient temperature at a distance of 9.5mm from the case
5. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm) copper pad.
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相关代理商/技术参数
1N5821-T/R 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 30V 3A 2-Pin DO-201AD T/R
1N5821-T3 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER DIODE
1N5821-TB 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:3.0A SCHOTTKY BARRIER RECTIFIER
1N5821-TP 功能描述:肖特基二极管与整流器 3.0A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
1N5821US 制造商:Microsemi Corporation 功能描述:SCHOTTKY 30V 3A 2PIN D-5B - Bulk
1N5822 功能描述:肖特基二极管与整流器 Vr/40V Io/3A BULK RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
1N5822 _AY _10001 制造商:PanJit Touch Screens 功能描述:
1N5822 A0G 功能描述:DIODE SCHOTTKY 40V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:- 包装:带盒(TB) 零件状态:在售 二极管类型:肖特基 电压 - DC 反向(Vr)(最大值):40V 电流 - 平均整流(Io):3A 不同 If 时的电压 - 正向(Vf:525mV @ 3A 速度:快速恢复 = 200mA(Io) 不同?Vr 时的电流 - 反向漏电流:500μA @ 40V 不同?Vr,F 时的电容:200pF @ 4V,1MHz 安装类型:通孔 封装/外壳:DO-201AD,轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500